IPP030N10NF2SAKMA1 Infineon Technologies
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.68 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.52 EUR |
| 2000+ | 1.44 EUR |
| 5000+ | 1.40 EUR |
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Technische Details IPP030N10NF2SAKMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 140µA, Supplier Device Package: PG-TO220-3-U05, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V.
Weitere Produktangebote IPP030N10NF2SAKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP030N10NF2SAKMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 140µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V |
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