| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.4 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.75 EUR |
| 3000+ | 0.7 EUR |
| 5000+ | 0.68 EUR |
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Technische Details IPP044N03LF2SAKSA1 Infineon Technologies
Description: MOSFET N-CH 30V 70A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc), Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V, Power Dissipation (Max): 3.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 30µA, Supplier Device Package: PG-TO220-3-U05, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V.
Weitere Produktangebote IPP044N03LF2SAKSA1 nach Preis ab 1.59 EUR bis 3.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IPP044N03LF2SAKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 70A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP044N03LF2SAKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.59 EUR |