auf Bestellung 2789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.63 EUR |
| 3000+ | 0.59 EUR |
| 5000+ | 0.57 EUR |
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Technische Details IPP044N03LF2SAKSA1 Infineon Technologies
Description: MOSFET N-CH 30V 70A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc), Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V, Power Dissipation (Max): 3.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 30µA, Supplier Device Package: PG-TO220-3-U05, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V.
Weitere Produktangebote IPP044N03LF2SAKSA1 nach Preis ab 0.69 EUR bis 2.32 EUR
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| IPP044N03LF2SAKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 70A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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