auf Bestellung 600 Stücke:
Lieferzeit 192-196 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.35 EUR |
| 25+ | 5.10 EUR |
| 100+ | 4.51 EUR |
| 500+ | 4.28 EUR |
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Technische Details IPP051N15N5AKSA1 Infineon Technologies
Description: MOSFET N-CH 150V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V, Power Dissipation (Max): 300mW (Tc), Vgs(th) (Max) @ Id: 4.6V @ 264µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V.
Weitere Produktangebote IPP051N15N5AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP051N15N5AKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1613 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP051N15N5AKSA1 Produktcode: 197743
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Transistoren > MOSFET N-CH |
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IPP051N15N5AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| IPP051N15N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP051N15N5AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V Power Dissipation (Max): 300mW (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V |
Produkt ist nicht verfügbar |
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| IPP051N15N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 115A Pulsed drain current: 480A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |