Technische Details IPP05CN10NGXKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 100A, Pulsed drain current: 400A, Power dissipation: 300W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 5.4mΩ, Mounting: THT, Kind of channel: enhancement.
Weitere Produktangebote IPP05CN10NGXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IPP05CN10NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IPP05CN10NGXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPP05CN10NGXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP05CN10NGXKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH


