IPP089N15NM6AKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 158W; TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 29nC
On-state resistance: 8.9mΩ
Power dissipation: 158W
Drain current: 88A
Drain-source voltage: 150V
Polarisation: unipolar
Case: TO220-3
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Technische Details IPP089N15NM6AKSA1 INFINEON TECHNOLOGIES
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V, Power Dissipation (Max): 3.8W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 73µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V.
Weitere Produktangebote IPP089N15NM6AKSA1 nach Preis ab 1.5 EUR bis 4.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPP089N15NM6AKSA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 2131 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP089N15NM6AKSA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 73µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V |
auf Bestellung 1275 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP089N15NM6AKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 2131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.14 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.45 EUR |
| 500+ | 2.04 EUR |
| 1000+ | 1.76 EUR |
| 2500+ | 1.67 EUR |
| 5000+ | 1.62 EUR |
| IPP089N15NM6AKSA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.47 EUR |
| 50+ | 2.22 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.5 EUR |