Technische Details IPP09N03LA
Description: MOSFET N-CH 25V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1642 pF @ 15 V.
Weitere Produktangebote IPP09N03LA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IPP09N03LA | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP09N03LA - IPP09N03L POWER FIELD-EFFECT TRANSISTORtariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPP09N03LA |
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Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPP09N03LA - IPP09N03L POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPP09N03LA - IPP09N03L POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)

