IPP120N04S3-02 Infineon Technologies
Hersteller: Infineon Technologies
Description: PFET, 120A I(D), 40V, 0.0023OHM,
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
| Anzahl | Privatkunde |
|---|---|
| 94+ | 6.34 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
94 Stücke
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Technische Details IPP120N04S3-02 Infineon Technologies
Description: PFET, 120A I(D), 40V, 0.0023OHM,, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 230µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
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IPP120N04S3-02 | Infineon Technologies |
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IPP120N04S302AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W On-state resistance: 2mΩ Mounting: THT Power dissipation: 300W Gate charge: 160nC Polarisation: unipolar Technology: OptiMOS™ T Drain current: 120A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 |
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| IPP120N04S3-02 |
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Hersteller: Infineon Technologies
MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T
MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP120N04S302AKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
On-state resistance: 2mΩ
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Polarisation: unipolar
Technology: OptiMOS™ T
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
On-state resistance: 2mΩ
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Polarisation: unipolar
Technology: OptiMOS™ T
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH