IPP120N10S403AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 28968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 4.55 EUR |
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Technische Details IPP120N10S403AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: PG-TO220-3-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP120N10S403AKSA1 nach Preis ab 3.84 EUR bis 4.89 EUR
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 7268 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 13700 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-CHANNEL 100+ |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N10S403AKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP120N10S403AKSA1 - IPP120N10 75V-100V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 20700 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP120N10S403AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |