IPP120N20NFDAKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
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Technische Details IPP120N20NFDAKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 84A TO220-3, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V.
Weitere Produktangebote IPP120N20NFDAKSA1 nach Preis ab 3.41 EUR bis 17.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPP120N20NFDAKSA1 | Infineon Technologies |
MOSFETs N-Ch 200V 84A TO220-3 |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP120N20NFDAKSA1 | Infineon |
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube IPP120N20NFDAKSA1 IPP120N20NFDA TIPP120n20nfda Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP120N20NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ FD |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 200V 84A TO220-3
MOSFETs N-Ch 200V 84A TO220-3
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.52 EUR |
| 10+ | 7.69 EUR |
| 25+ | 3.41 EUR |
| IPP120N20NFDAKSA1 |
|
Hersteller: Infineon
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube IPP120N20NFDAKSA1 IPP120N20NFDA TIPP120n20nfda
Anzahl je Verpackung: 5 Stücke
Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube IPP120N20NFDAKSA1 IPP120N20NFDA TIPP120n20nfda
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 12.05 EUR |
| IPP120N20NFDAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |