IPP139N08N3G Infineon Technologies
Hersteller: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
auf Bestellung 15437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 495+ | 1.02 EUR |
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Technische Details IPP139N08N3G Infineon Technologies
Description: MOSFET N-CH 80V 45A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V.
Weitere Produktangebote IPP139N08N3G nach Preis ab 0.87 EUR bis 0.96 EUR
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| IPP139N08N3G | Hersteller : Infineon Technologies |
IPP139N08N3G |
auf Bestellung 11441 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP139N08N3G | Hersteller : Infineon Technologies |
IPP139N08N3G |
auf Bestellung 3911 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP139N08N3G | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP139N08N3G - IPP139N08 POWER FIELD-EFFECT TRANSISTOR tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 11261 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP139N08N3 G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 45A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPP139N08N3 G | Hersteller : Infineon Technologies |
MOSFET N-Ch 80V 45A TO220-3 OptiMOS 3 |
Produkt ist nicht verfügbar |