IPP139N08N3G Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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Technische Details IPP139N08N3G Infineon Technologies
Description: MOSFET N-CH 80V 45A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 33µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP139N08N3G nach Preis ab 1.06 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| IPP139N08N3G | Infineon Technologies |
IPP139N08N3G |
auf Bestellung 11441 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP139N08N3G | Infineon Technologies |
IPP139N08N3G |
auf Bestellung 3911 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| IPP139N08N3G | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP139N08N3G - IPP139N08 POWER FIELD-EFFECT TRANSISTORtariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 11261 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IPP139N08N3G |
![]() |
Hersteller: Infineon Technologies
IPP139N08N3G
IPP139N08N3G
auf Bestellung 11441 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 572+ | 1.14 EUR |
| 1000+ | 1.06 EUR |
| IPP139N08N3G |
![]() |
Hersteller: Infineon Technologies
IPP139N08N3G
IPP139N08N3G
auf Bestellung 3911 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 572+ | 1.14 EUR |
| 1000+ | 1.06 EUR |
| IPP139N08N3G |
![]() |
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPP139N08N3G - IPP139N08 POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPP139N08N3G - IPP139N08 POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 11261 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 477+ | 1.55 EUR |

