IPP320N20N3GXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 3.59 EUR |
| 25+ | 2.5 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.76 EUR |
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Technische Details IPP320N20N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 200V 34A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V.
Weitere Produktangebote IPP320N20N3GXKSA1 nach Preis ab 1.86 EUR bis 14.3 EUR
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IPP320N20N3GXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 200V 34A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 11513 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP320N20N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3 Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-TO220-3 Kind of package: tube Polarisation: unipolar On-state resistance: 32mΩ Power dissipation: 136W Drain current: 34A Gate-source voltage: ±20V Drain-source voltage: 200V |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP320N20N3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 200V 34A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 11513 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.35 EUR |
| 50+ | 3.18 EUR |
| 100+ | 2.88 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.17 EUR |
| 2000+ | 2.02 EUR |
| 5000+ | 1.86 EUR |
| IPP320N20N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 136W
Drain current: 34A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 136W
Drain current: 34A
Gate-source voltage: ±20V
Drain-source voltage: 200V
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |