IPP47N10SL26AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.01 EUR |
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Technische Details IPP47N10SL26AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 47A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 2V @ 2mA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
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