IPP50R190CEXKSA1 Infineon
Hersteller: Infineon
Trans MOSFET N-CH 500V 18.5A 3-Pin(3+Tab) TO-220 Tube IPP50R190CEXKSA1 INFINEON TIPP50r190ce
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 3.28 EUR |
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Technische Details IPP50R190CEXKSA1 Infineon
Description: MOSFET N-CH 500V 18.5A TO220-3, Power Dissipation (Max): 127W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 510µA.
Weitere Produktangebote IPP50R190CEXKSA1 nach Preis ab 1.37 EUR bis 3.85 EUR
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IPP50R190CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 18.5A TO220-3 Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 510µA |
auf Bestellung 649 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP50R190CEXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-3
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Description: MOSFET N-CH 500V 18.5A TO220-3
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 510µA
auf Bestellung 649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.85 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |