IPP50R380CEXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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Technische Details IPP50R380CEXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 500V 9.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 260µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V.
Weitere Produktangebote IPP50R380CEXKSA1 nach Preis ab 0.67 EUR bis 2.29 EUR
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IPP50R380CEXKSA1 | Infineon Technologies |
MOSFETs N-Ch 500V 32.4A TO220-3 |
auf Bestellung 1208 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP50R380CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 9.9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 260µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP50R380CEXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 500V 32.4A TO220-3
MOSFETs N-Ch 500V 32.4A TO220-3
auf Bestellung 1208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.08 EUR |
| 100+ | 1 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.72 EUR |
| 2500+ | 0.68 EUR |
| 5000+ | 0.67 EUR |
| IPP50R380CEXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.29 EUR |
| 50+ | 1.08 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |