IPP60R016CM8XKSA1 Infineon Technologies

Description: IPP60R016CM8XKSA1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V.