| Anzahl | Preis |
|---|---|
| 1+ | 9.19 EUR |
| 10+ | 4.82 EUR |
| 100+ | 4.42 EUR |
| 500+ | 3.66 EUR |
| 1000+ | 3.61 EUR |
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Technische Details IPP60R065S7XKSA1 Infineon Technologies
Description: HIGH POWER_NEW PG-TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 490µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V.
Weitere Produktangebote IPP60R065S7XKSA1 nach Preis ab 4.41 EUR bis 9.19 EUR
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IPP60R065S7XKSA1 | Infineon Technologies |
 Description: HIGH POWER_NEW PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R065S7XKSA1 |
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Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Description: HIGH POWER_NEW PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.19 EUR |
| 50+ | 4.83 EUR |
| 100+ | 4.41 EUR |