IPP60R099C6XKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.89 EUR |
| 50+ | 5.75 EUR |
| 100+ | 5.21 EUR |
| 500+ | 4.63 EUR |
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Technische Details IPP60R099C6XKSA1 Infineon Technologies
Description: INFINEON - IPP60R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 37.9 A, 0.099 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 37.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 278W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.099ohm.
Weitere Produktangebote IPP60R099C6XKSA1 nach Preis ab 4.4 EUR bis 12.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IPP60R099C6XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 961 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET On-state resistance: 99mΩ Mounting: THT Power dissipation: 278W Polarisation: unipolar Technology: CoolMOS™ C6 Drain current: 37.9A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R099C6XKSA1 | INFINEON |
Description: INFINEON - IPP60R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 37.9 A, 0.099 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 37.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 278W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.099ohm |
auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R099C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37.9A TO220-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) FET Type: N-Channel |
auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R099C6XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.93 EUR |
| 50+ | 5.65 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.4 EUR |
| IPP60R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.79 EUR |
| 15+ | 5.97 EUR |
| 17+ | 5.07 EUR |
| 20+ | 5 EUR |
| IPP60R099C6XKSA1 |
|
Hersteller: INFINEON
Description: INFINEON - IPP60R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 37.9 A, 0.099 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 37.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 278W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.099ohm
Description: INFINEON - IPP60R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 37.9 A, 0.099 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 37.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 278W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.099ohm
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 12.29 EUR |
| 29+ | 8.01 EUR |
| 100+ | 5.74 EUR |
| IPP60R099C6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 600V 37.9A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
FET Type: N-Channel
auf Bestellung 1434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.98 EUR |
| 50+ | 6.93 EUR |
| 100+ | 6.34 EUR |
| 500+ | 5.32 EUR |
| 1000+ | 4.99 EUR |