IPP60R099P7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 14+ | 5.36 EUR |
| 15+ | 4.82 EUR |
| 16+ | 4.56 EUR |
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Technische Details IPP60R099P7 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 20A, Power dissipation: 117W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 99mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote IPP60R099P7
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IPP60R099P7 | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 6 Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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IPP60R099P7 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |