| Anzahl | Preis |
|---|---|
| 1+ | 7.04 EUR |
| 10+ | 3.64 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.99 EUR |
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Technische Details IPP60R120C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 19A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V, Power Dissipation (Max): 92W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote IPP60R120C7XKSA1 nach Preis ab 2.98 EUR bis 7.67 EUR
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IPP60R120C7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 19A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 553 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R120C7XKSA1 | Infineon |
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auf Bestellung 955 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPP60R120C7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 600V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.67 EUR |
| 50+ | 3.97 EUR |
| 100+ | 3.61 EUR |
| 500+ | 2.98 EUR |
| IPP60R120C7XKSA1 |
|
Hersteller: Infineon
auf Bestellung 955 Stücke:
Lieferzeit 21-28 Tag (e)