| Anzahl | Preis |
|---|---|
| 1+ | 4.38 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.46 EUR |
| 2500+ | 1.39 EUR |
| 5000+ | 1.34 EUR |
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Technische Details IPP60R180CM8XKSA1 Infineon Technologies
Description: IPP60R180CM8XKSA1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 140µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V.
Weitere Produktangebote IPP60R180CM8XKSA1 nach Preis ab 2.45 EUR bis 5.47 EUR
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IPP60R180CM8XKSA1 | Infineon Technologies |
 Description: IPP60R180CM8XKSA1Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 140µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R180CM8XKSA1 |
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Hersteller: Infineon Technologies
Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
Description: IPP60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.47 EUR |
| 50+ | 2.72 EUR |
| 100+ | 2.45 EUR |