IPP60R190E6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
| Anzahl | Preis |
|---|---|
| 4+ | 5.23 EUR |
| 50+ | 2.63 EUR |
| 100+ | 2.38 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.8 EUR |
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Technische Details IPP60R190E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 630µA, Power Dissipation (Max): 151W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-3.
Weitere Produktangebote IPP60R190E6XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPP60R190E6XKSA1 | Infineon Technologies |
MOSFET HIGH POWER_LEGACY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IPP60R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPP60R190E6XKSA1 |
|
Hersteller: Infineon Technologies
MOSFET HIGH POWER_LEGACY
MOSFET HIGH POWER_LEGACY
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R190E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH