IPP60R190E6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 20.2A TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 630µA, Power Dissipation (Max): 151W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-3.