IPP60R299CPXKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 200+ | 1.95 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
200 Stücke
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Technische Details IPP60R299CPXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote IPP60R299CPXKSA1 nach Preis ab 1.52 EUR bis 5.93 EUR
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IPP60R299CPXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1146 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R299CPXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 11A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R299CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 96W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.98 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.98 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 2.89 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 210+ | 3.07 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1146 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.32 EUR |
| 65+ | 2.64 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.65 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 5.34 EUR |
| 64+ | 2.59 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.52 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 650V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 50+ | 2.98 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.32 EUR |
| IPP60R299CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)