IPP65R150CFDAAKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.13 EUR |
| 10+ | 5.42 EUR |
| 25+ | 3.89 EUR |
| 100+ | 3.64 EUR |
| 500+ | 3.63 EUR |
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Technische Details IPP65R150CFDAAKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP65R150CFDAAKSA1 nach Preis ab 4.31 EUR bis 8.1 EUR
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IPP65R150CFDAAKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 22.4A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 259 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP65R150CFDAAKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 22.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.1 EUR |
| 50+ | 4.61 EUR |
| 100+ | 4.31 EUR |