IPP65R190CFD7AAKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 512 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 235+ | 2.28 EUR |
| 500+ | 2.08 EUR |
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Technische Details IPP65R190CFD7AAKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V, Power Dissipation (Max): 77W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 320µA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP65R190CFD7AAKSA1 nach Preis ab 2.11 EUR bis 4.75 EUR
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
auf Bestellung 657 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 668 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
N-Channel MOSFET Transistor |
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP65R190CFD7AAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 14A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |