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IPP65R600C6XKSA1

IPP65R600C6XKSA1 Infineon Technologies

4210ipd65r600c6_rev.2.1.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
174+0.87 EUR
183+0.80 EUR
189+0.75 EUR
190+0.71 EUR
Mindestbestellmenge: 174
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPP65R600C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 7.3A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.

Weitere Produktangebote IPP65R600C6XKSA1 nach Preis ab 0.68 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPP65R600C6XKSA1 IPP65R600C6XKSA1 Hersteller : Infineon Technologies 4210ipd65r600c6_rev.2.1.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 332 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
165+0.92 EUR
174+0.84 EUR
183+0.77 EUR
189+0.72 EUR
190+0.68 EUR
Mindestbestellmenge: 165
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R600C6XKSA1 IPP65R600C6XKSA1 Hersteller : Infineon Technologies IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 165350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
462+1.02 EUR
Mindestbestellmenge: 462
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R600C6XKSA1 IPP65R600C6XKSA1 Hersteller : Infineon Technologies 4210ipd65r600c6_rev.2.1.pdffolderiddb3a3043156fd5730115c736bcc70ff2fi.pdf Trans MOSFET N-CH 700V 7.3A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R600C6XKSA1 IPP65R600C6XKSA1 Hersteller : Infineon Technologies IPP65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac74e318c2c70 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH