IPP65R660CFDXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 62.5W (Tc)
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Technische Details IPP65R660CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3, Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4.5V @ 200µA, Power Dissipation (Max): 62.5W (Tc).