| Anzahl | Preis |
|---|---|
| 1+ | 4.17 EUR |
| 10+ | 3.73 EUR |
| 25+ | 2.25 EUR |
| 100+ | 2.16 EUR |
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Technische Details IPP70N12S311AKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL_100+, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 83µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.
Weitere Produktangebote IPP70N12S311AKSA1 nach Preis ab 3.04 EUR bis 5.97 EUR
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IPP70N12S311AKSA1 | Infineon Technologies |
 Description: MOSFET N-CHANNEL_100+Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 83µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP70N12S311AKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CHANNEL_100+
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.97 EUR |
| 50+ | 3.04 EUR |