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IPP80N06S2-09 INF


INFNS09526-1.pdf?t.download=true&u=5oefqw Hersteller: INF
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Technische Details IPP80N06S2-09 INF

Description: IPP80N06 - 55V-60V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 125µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V.

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IPP80N06S2-09 IPP80N06S2-09 Hersteller : Infineon Technologies ipp_b80n06s2-09_green.pdf Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube
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IPP80N06S2-09 IPP80N06S2-09 Hersteller : Infineon Technologies INFNS09526-1.pdf?t.download=true&u=5oefqw Description: IPP80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Produkt ist nicht verfügbar
IPP80N06S2-09 IPP80N06S2-09 Hersteller : Infineon Technologies Infineon-IPP_B80N06S2_09-DS-v01_00-en-785421.pdf MOSFET N-Ch 55V 80A TO220-3 OptiMOS
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