IPP90R340C3XKSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO220-3
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.7 EUR |
| 10+ | 8.51 EUR |
| 50+ | 6.71 EUR |
| 100+ | 6.14 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details IPP90R340C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 900V 15A TO220-3, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V.
Weitere Produktangebote IPP90R340C3XKSA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IPP90R340C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 15A Case: TO220-3 On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Power dissipation: 208W Gate charge: 94nC |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPP90R340C3XKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 208W
Gate charge: 94nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 208W
Gate charge: 94nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)