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IPS060N03LGAKMA1 ROCHESTER ELECTRONICS


IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPS060N03LGAKMA1 - IPS060N03 POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1429+0.51 EUR
Mindestbestellmenge: 1429 Stücke
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Technische Details IPS060N03LGAKMA1 ROCHESTER ELECTRONICS

Description: MOSFET N-CH 30V 50A TO251-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO251-3-11, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 56W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.

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IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1011+0.55 EUR
Mindestbestellmenge: 1011 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies Infineon-IPD060N03LG-DS-v02_01-en[1]-1226028.pdf MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
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IPS060N03LGAKMA1 Infineon Technologies IP%28D%2CF%2CS%2CU%29060N03L_G.pdf Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPS060N03LGAKMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1011+0.55 EUR
Mindestbestellmenge: 1011 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPS060N03LGAKMA1 Infineon-IPD060N03LG-DS-v02_01-en[1]-1226028.pdf
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPS060N03LGAKMA1 IP%28D%2CF%2CS%2CU%29060N03L_G.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH