IPS65R1K0CEAKMA1 Infineon Technologies

Description: MOSFET N-CH 650V 4.3A TO251, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 3.5V @ 200µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.