IPS80R2K4P7AKMA1 Infineon Technologies

Description: MOSFET N-CH 800V 2.5A TO251-3, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 22W (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.