Weitere Produktangebote IPT010N08NM5ATMA1 nach Preis ab 5.33 EUR bis 13.2 EUR
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IPT010N08NM5ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH 40<-<100V PG-HSOF-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT010N08NM5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 43A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 1754 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT010N08NM5ATMA1 | Hersteller : Infineon Technologies |
MOSFETs IFX FET > 60-80V |
auf Bestellung 9504 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT010N08NM5ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V |
auf Bestellung 9192 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT010N08NM5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPT010N08NM5ATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 425 A, 1050 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 425A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: HSOF Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1050µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1455 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT010N08NM5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 43A 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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| IPT010N08NM5ATMA1 | Hersteller : Infineon |
N-Channel 80 V 43A (Ta), 425A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IPT010N08NM5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 425A Power dissipation: 375W Case: HSOF-8 On-state resistance: 1.05mΩ Mounting: SMD Gate charge: 178nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| IPT010N08NM5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 80V; 425A; 375W; PG-HSOF-8 Type of transistor: N-MOSFET Drain-source voltage: 80V Drain current: 425A Power dissipation: 375W Case: PG-HSOF-8 On-state resistance: 1.05mΩ Mounting: SMD Gate charge: 223nC Kind of channel: enhancement Gate-source voltage: 20V |
Produkt ist nicht verfügbar |