IPT013N08NM5LF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
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Technische Details IPT013N08NM5LF Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V, Power Dissipation (Max): 3.1W (Ta), 278W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 250µA, Supplier Device Package: PG-HSOF-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V.
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IPT013N08NM5LF | Hersteller : Infineon Technologies |
Description: SINGLE N-CHANNEL LINEAR FET 80V Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V Power Dissipation (Max): 3.1W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V |
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