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IPT013N08NM5LF Infineon Technologies


Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f
Hersteller: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
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Technische Details IPT013N08NM5LF Infineon Technologies

Description: SINGLE N-CHANNEL LINEAR FET 80V, Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-HSOF-8, Vgs(th) (Max) @ Id: 4.1V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 278W (Tc).

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IPT013N08NM5LF IPT013N08NM5LF Infineon Technologies Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f Description: SINGLE N-CHANNEL LINEAR FET 80V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT013N08NM5LF Infineon-IPT013N08NM5LF-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e0a29d018f
Hersteller: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH