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IPT210N25NFDATMA1

IPT210N25NFDATMA1 Infineon Technologies

Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
Hersteller: Infineon Technologies
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
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500+6.95 EUR
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Technische Details IPT210N25NFDATMA1 Infineon Technologies

Description: MV POWER MOS, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-HSOF-8-1, Vgs(th) (Max) @ Id: 4V @ 267µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote IPT210N25NFDATMA1

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IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2 Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon_IPT210N25NFD_DS_v02_00_EN-1128470.pdf MOSFET TRENCH >=100V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT210N25NFDATMA1 Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
IPT210N25NFDATMA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT210N25NFDATMA1 Infineon_IPT210N25NFD_DS_v02_00_EN-1128470.pdf
IPT210N25NFDATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH