IPT210N25NFDATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 70+ | 9.65 EUR |
| 100+ | 9.03 EUR |
| 500+ | 8.39 EUR |
| 1000+ | 7.74 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
70 Stücke
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Produktbewertung abgeben
Technische Details IPT210N25NFDATMA1 Infineon Technologies
Description: MV POWER MOS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 267µA, Supplier Device Package: PG-HSOF-8-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V.
Weitere Produktangebote IPT210N25NFDATMA1 nach Preis ab 7.16 EUR bis 17.72 EUR
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IPT210N25NFDATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 250V 69A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 35823 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT210N25NFDATMA1 | Infineon Technologies |
Description: MV POWER MOS Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 267µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V |
auf Bestellung 1684 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPT210N25NFDATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 250V 69A 9-Pin(8+Tab) HSOF T/R
Trans MOSFET N-CH 250V 69A 9-Pin(8+Tab) HSOF T/R
auf Bestellung 35823 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 9.65 EUR |
| 100+ | 9.03 EUR |
| 500+ | 8.39 EUR |
| 1000+ | 7.74 EUR |
| 10000+ | 7.16 EUR |
| IPT210N25NFDATMA1 |
|
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Description: MV POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.72 EUR |
| 10+ | 12.14 EUR |
| 100+ | 8.98 EUR |
| 500+ | 7.64 EUR |
| 1000+ | 7.43 EUR |