IPT60R160CM8XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.64 EUR |
| 2000+ | 1.53 EUR |
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Technische Details IPT60R160CM8XTMA1 Infineon Technologies
Description: IPT60R160CM8XTMA1, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-HSOF-8, Vgs(th) (Max) @ Id: 4.7V @ 150µA, Power Dissipation (Max): 124W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPT60R160CM8XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPT60R160CM8XTMA1 | Infineon Technologies |
Description: IPT60R160CM8XTMA1 Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 4.7V @ 150µA Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPT60R160CM8XTMA1 | Infineon Technologies |
Description: IPT60R160CM8XTMA1 Vgs(th) (Max) @ Id: 4.7V @ 150µA Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HSOF-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPT60R160CM8XTMA1 |
Hersteller: Infineon Technologies
Description: IPT60R160CM8XTMA1
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: IPT60R160CM8XTMA1
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPT60R160CM8XTMA1 |
Hersteller: Infineon Technologies
Description: IPT60R160CM8XTMA1
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Packaging: Cut Tape (CT)
Description: IPT60R160CM8XTMA1
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH