IPTC019N10NM5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 31A/279A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
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Technische Details IPTC019N10NM5ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 31A/279A HDSOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 210µA, Supplier Device Package: PG-HDSOP-16-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V.
Weitere Produktangebote IPTC019N10NM5ATMA1 nach Preis ab 3.19 EUR bis 9.38 EUR
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IPTC019N10NM5ATMA1 | Infineon Technologies |
MOSFETs IFX FET >80 - 100V |
auf Bestellung 1952 Stücke: Lieferzeit 10-14 Tag (e) |
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IPTC019N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 31A/279A HDSOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 2837 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPTC019N10NM5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16 Case: PG-HDSOP-16 Mounting: SMD Polarisation: N Gate charge: 160nC On-state resistance: 1.9mΩ Kind of channel: enhancement Power dissipation: 300W Drain current: 279A Gate-source voltage: 20V Pulsed drain current: 31A Drain-source voltage: 100V Type of transistor: N-MOSFET |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPTC019N10NM5ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET >80 - 100V
MOSFETs IFX FET >80 - 100V
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.36 EUR |
| 10+ | 5.44 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 3.29 EUR |
| 1800+ | 3.19 EUR |
| IPTC019N10NM5ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 31A/279A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Description: MOSFET N-CH 100V 31A/279A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
auf Bestellung 2837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.38 EUR |
| 10+ | 6.22 EUR |
| 100+ | 4.44 EUR |
| 500+ | 3.67 EUR |
| IPTC019N10NM5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1800+ | 3.33 EUR |