| Anzahl | Preis |
|---|---|
| 1+ | 10.21 EUR |
| 10+ | 6.86 EUR |
| 100+ | 4.98 EUR |
| 500+ | 4.54 EUR |
| 1800+ | 4.28 EUR |
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Technische Details IPTG017N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: PG-HSOG-8-1, Vgs(th) (Max) @ Id: 3.6V @ 275µA, Power Dissipation (Max): 3.8W (Ta), 395W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V.
Weitere Produktangebote IPTG017N12NM6ATMA1 nach Preis ab 6.06 EUR bis 13.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPTG017N12NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-HSOG-8-1 Vgs(th) (Max) @ Id: 3.6V @ 275µA Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 1346 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPTG017N12NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.53 EUR |
| 10+ | 9.22 EUR |
| 100+ | 6.78 EUR |
| 500+ | 6.06 EUR |