IPTG018N08NM5ATMA1 Infineon Technologies

Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)

Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V