IPTG025N08NM5ATMA1 Infineon Technologies

Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)

Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V