IPTG025N10NM5ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details IPTG025N10NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-HSOG-8-1, Vgs(th) (Max) @ Id: 3.8V @ 158µA, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IPTG025N10NM5ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPTG025N10NM5ATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPTG025N10NM5ATMA1 |
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Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH

