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IPU13N03LAG INFINEON



Hersteller: INFINEON
TO251 06+
auf Bestellung 3800 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IPU13N03LAG INFINEON

Description: MOSFET N-CH 25V 30A TO251-3, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: P-TO251-3-1, Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole.

Weitere Produktangebote IPU13N03LAG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPU13N03LA G IPU13N03LA G Infineon Technologies ipd13n03la_rev2.1_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU13N03LA G IPU13N03LA G Infineon Technologies DC_DC_Selection_1-520800.pdf MOSFET N-Ch 25V 30A IPAK-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU13N03LA G ipd13n03la_rev2.1_g.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU13N03LA G DC_DC_Selection_1-520800.pdf
Hersteller: Infineon Technologies
MOSFET N-Ch 25V 30A IPAK-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH