Technische Details IPU13N03LAG INFINEON
Description: MOSFET N-CH 25V 30A TO251-3, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: P-TO251-3-1, Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote IPU13N03LAG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IPU13N03LA G | Infineon Technologies |
Description: MOSFET N-CH 25V 30A TO251-3Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: P-TO251-3-1 Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IPU13N03LA G | Infineon Technologies |
MOSFET N-Ch 25V 30A IPAK-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPU13N03LA G |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 25V 30A TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO251-3-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPU13N03LA G |
![]() |
Hersteller: Infineon Technologies
MOSFET N-Ch 25V 30A IPAK-3
MOSFET N-Ch 25V 30A IPAK-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



