IPU60R1K5CEBKMA1 Infineon Technologies

Description: MOSFET N-CH 600V 3.1A TO251, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 3.5V @ 90µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.