IPU60R2K0C6BKMA1 Infineon Technologies

Description: MOSFET N-CH 600V 2.4A TO251-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 60µA, Power Dissipation (Max): 22.3W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.