IPU60R2K0C6BKMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPU60R2K0C6BKMA1 - IPU60R2K0 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Technische Details IPU60R2K0C6BKMA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 600V 2.4A TO251-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 3.5V @ 60µA, Power Dissipation (Max): 22.3W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.
Weitere Produktangebote IPU60R2K0C6BKMA1 nach Preis ab 0.81 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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IPU60R2K0C6BKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
auf Bestellung 352500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU60R2K0C6BKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
auf Bestellung 352500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 673+ | 0.81 EUR |