IPU80R1K0CEAKMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 411+ | 1.59 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.39 EUR |
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Technische Details IPU80R1K0CEAKMA1 Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3-341, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote IPU80R1K0CEAKMA1 nach Preis ab 1.39 EUR bis 2.14 EUR
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IPU80R1K0CEAKMA1 | Infineon Technologies |
 Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube |
auf Bestellung 37500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K0CEAKMA1 | Infineon Technologies |
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R1K0CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3-341 Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
auf Bestellung 124500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU80R1K0CEAKMA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPU80R1K0CEAKMA1 - IPU80R1K0CE 800V COOLMOS N-CHANNEL POWE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPU80R1K0CEAKMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 411+ | 1.59 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.39 EUR |
| IPU80R1K0CEAKMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-251 Tube
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 411+ | 1.59 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.39 EUR |
| IPU80R1K0CEAKMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 124500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 253+ | 2.14 EUR |
| IPU80R1K0CEAKMA1 |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPU80R1K0CEAKMA1 - IPU80R1K0CE 800V COOLMOS N-CHANNEL POWE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPU80R1K0CEAKMA1 - IPU80R1K0CE 800V COOLMOS N-CHANNEL POWE
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 2.06 EUR |