| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.71 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.09 EUR |
| 1500+ | 2.06 EUR |
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Technische Details IPU95R450P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 360µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V.
Weitere Produktangebote IPU95R450P7AKMA1 nach Preis ab 1.87 EUR bis 5.63 EUR
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IPU95R450P7AKMA1 | Infineon Technologies |
 Description: MOSFET N-CH 950V 14A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V |
auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPU95R450P7AKMA1 | Infineon Technologies |
Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IPU95R450P7AKMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.63 EUR |
| 75+ | 2.63 EUR |
| 150+ | 2.38 EUR |
| 525+ | 2.02 EUR |
| 1050+ | 1.87 EUR |
| IPU95R450P7AKMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube
Trans MOSFET N-CH 950V 14A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 4.99 EUR |
| 48+ | 3.53 EUR |