IPW50R280CE Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
auf Bestellung 101641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
392+ | 1.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPW50R280CE Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 350µA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V.
Weitere Produktangebote IPW50R280CE
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IPW50R280CE | Hersteller : Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CE |
Produkt ist nicht verfügbar |