IPW50R280CE Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 3.5V @ 350µA, Power Dissipation (Max): 119W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V.