Technische Details IPW60R018CFD7XKSA1 Infineon Technologies
Description: MOSFET N CH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V.
Weitere Produktangebote IPW60R018CFD7XKSA1 nach Preis ab 13.64 EUR bis 30.31 EUR
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IPW60R018CFD7XKSA1 | Infineon Technologies |
 Description: MOSFET N CHPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V |
auf Bestellung 1563 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R018CFD7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 215 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPW60R018CFD7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.09 EUR |
| 30+ | 16.77 EUR |
| 120+ | 14.51 EUR |
| 510+ | 13.64 EUR |
| IPW60R018CFD7XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 30.31 EUR |
| 10+ | 20.84 EUR |
| 100+ | 17.51 EUR |
| 480+ | 16 EUR |