IPW60R024CM8XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPW60R024CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.06mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V
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Technische Details IPW60R024CM8XKSA1 Infineon Technologies
Description: IPW60R024CM8XKSA1, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 41.7A, 10V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.06mA, Supplier Device Package: PG-TO247-3-U06, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5382 pF @ 400 V.
Weitere Produktangebote IPW60R024CM8XKSA1 nach Preis ab 9.1 EUR bis 16.24 EUR
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IPW60R024CM8XKSA1 | Infineon Technologies |
MOSFETs 600V CoolMOS CM8 Power Transistor |
auf Bestellung 1425 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPW60R024CM8XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs 600V CoolMOS CM8 Power Transistor
MOSFETs 600V CoolMOS CM8 Power Transistor
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.24 EUR |
| 10+ | 9.7 EUR |
| 100+ | 9.1 EUR |


